Current-matched III–V/Si epitaxial tandem solar cells with 25.0% efficiency
S Fan, JY Zhengshan, RD Hool, P Dhingra… - Cell reports physical …, 2020 - cell.com
III–V/Si epitaxial tandems with a 1.7-eV GaAsP top cell promise stable power conversion
efficiencies above the fundamental limit of Si single-junction cells. However, III–V/Si epitaxial …
efficiencies above the fundamental limit of Si single-junction cells. However, III–V/Si epitaxial …
Solar cells
SM Goodnick, C Honsberg - Springer Handbook of Semiconductor …, 2022 - Springer
In this review chapter, we present the current state of the art of photovoltaic device
technology. We begin with an overview of the fundamentals of solar cell device operation …
technology. We begin with an overview of the fundamentals of solar cell device operation …
23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations
Abstract A 2-terminal, dual-junction, epitaxially integrated, GaAsP/Si tandem solar cell with
an 3rd party certified efficiency of 23.4% was fabricated via MOCVD growth on an ex-situ …
an 3rd party certified efficiency of 23.4% was fabricated via MOCVD growth on an ex-situ …
AlInP‐passivated III–V solar cells grown by dynamic hydride vapor‐phase epitaxy
JT Boyer, KL Schulte, MR Young… - Progress in …, 2023 - Wiley Online Library
We report the development of AlInP‐passivated solar cells grown by dynamic hydride vapor‐
phase epitaxy (D‐HVPE) with AM1. 5G efficiencies of 26.0% for single‐junction (1J) GaAs …
phase epitaxy (D‐HVPE) with AM1. 5G efficiencies of 26.0% for single‐junction (1J) GaAs …
Improving the performance of GaInP solar cells through rapid thermal annealing and delta doping
We show that the effect of rapid thermal annealing (RTA) on carrier lifetime in GaInP grown
by molecular beam epitaxy depends strongly on both doping type and density, and that …
by molecular beam epitaxy depends strongly on both doping type and density, and that …
1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures
Y Shoji, R Oshima, K Makita… - Advanced Energy …, 2023 - Wiley Online Library
Multijunction solar cells combining III–V and Si materials can provide high photoelectric
conversion efficiency. Two‐terminal III–V//Si triple‐junction solar cells with an efficiency of …
conversion efficiency. Two‐terminal III–V//Si triple‐junction solar cells with an efficiency of …
The critical role of AlInP window design in III–V rear-emitter solar cells
This article highlights the critical role of window design on short circuit carrier collection in
rear-emitter solar cells, as demonstrated through modeling and experiment using …
rear-emitter solar cells, as demonstrated through modeling and experiment using …
Design for Increased Defect Tolerance in Metamorphic GaAsP-on-Si Top Cells
T Kasher, LM Kaliszewski… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
To date, the greatest performance limiter in monolithic III-V/Si tandem (multijunction) solar
cells, like GaAs P/Si, is excess threading dislocation densities (TDD) resulting from the …
cells, like GaAs P/Si, is excess threading dislocation densities (TDD) resulting from the …
Effect of Threading Dislocations on GaInP Front-and Rear-Junction Solar Cells Grown on Si
B Li, P Dhingra, RD Hool, S Fan… - IEEE Journal of …, 2024 - ieeexplore.ieee.org
We compare the performance of front-junction (FJ) and rear-heterojunction (RHJ) 1.9 eV
GaInP solar cells grown on Si by molecular beam epitaxy. First, time-resolved …
GaInP solar cells grown on Si by molecular beam epitaxy. First, time-resolved …
Designing an Epitaxially-Integrated DBR for Dislocation Mitigation in Monolithic GaAsP/Si Tandem Solar Cells
This work explores epitaxially integrated distributed Bragg reflectors (DBR) as a strategy to
mitigate the impact of threading dislocations on the performance of monolithic GaAs0. 75P0 …
mitigate the impact of threading dislocations on the performance of monolithic GaAs0. 75P0 …