The optical properties of germanium can be tailored by combining strain engineering and n-
type doping. In this paper, we review the recent progress that has been reported in the study …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

Lately, germanium based materials attract a lot of interest as they can overcome some limits
inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red …

The structural, morphological, and energy band alignment properties of biaxial tensile-
strained germanium epilayers, grown in-situ on GaAs via a linearly graded In x Ga 1-x As …

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size
were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS …

We report a photoluminescence study of high-quality Ge samples at temperatures 12 K≤
T≤ 295 K, over a spectral range that covers phonon-assisted emission from the indirect gap …

We demonstrate tensile-strained pseudomorphic Ge0. 934Sn0. 066/Ge quantum wells in a
microdisk resonator using silicon nitride stressor layers. The hydrostatic and biaxial strain …

Ge 1-xy Si x Sn y alloys with y> x have been grown directly on Si substrates. Room
temperature photoluminescence measurements indicate that the alloys have direct …

Mechanical strain engineering has been promising for many integrated photonic
applications. However, for the engineering of a material electronic bandgap, a trade-off …