Metal silicide thin films and nanostructures typically employed in electronics have recently
gained significant attention in battery technology, where they are used as active or inactive …

This paper summarises recent developments in in situ TEM instrumentation and operation
conditions. The focus of the discussion is on demonstrating how improved understanding of …

We reviewed the formation of Ge nanowire heterostructure and its field‐effect characteristics
by a controlled reaction between a single‐crystalline Ge nanowire and Ni contact pads …

One dimensional metal oxide nanostructures have attracted much attention owing to their
fascinating functional properties. Among them, piezoelectricity and photocatalysts along with …

The events of repeating nucleation in point contact reactions between nanowires of Si and
Ni or Co have been revisited here due to uphill diffusion as well as an extremely high …

Resistive random-access memory (ReRAM) has been of wide interest for its potential to
replace flash memory in the next-generation nonvolatile memory roadmap. In this study, we …

Transition metal silicide nanowires (NWs) have attracted increasing attention as they
possess advantages of both silicon NWs and transition metals. Over the past years, there …

In2Se3 is an essential phase change material and CuInSe2 is the fundamental basis of the
copper–indium–gallium–diselenide (CIGS) solar energy material. In this paper, we …

Copper silicide has been studied in the applications of electronic devices and catalysts. In
this study, Cu3Si/Si nanowire heterostructures were fabricated through solid state reaction in …

For wide-ranging applications in nanoscale electronic devices, durable and reproducible p-
type nanostructures are essential. In this work, simple ZnO nanowire (NW) p–n …