Gallium nitride semiconductors in power electronics for electric vehicles: Advantages and challenges

A Letellier, MR Dubois, JP Trovao… - 2015 IEEE vehicle …, 2015 - ieeexplore.ieee.org
Electric and Hybrid Vehicles mostly use Silicon-based IGBTs for driving the motor and
controlling DC/DC converters in their powertrain. IGBTs transition times usually limit their …

Gate Drive Circuit Suitable for a GaN Gate Injection Transistor

F Hattori, Y Yanagisawa, J Imaoka… - IEEE Access, 2023 - ieeexplore.ieee.org
A GaN gate injection transistor (GIT) has great potential as a power semiconductor device.
However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding …

Design and Optimization of the Driver Circuit for Non-Insulating Gate GaN-Transistors Enabling Fast Switching and High-Frequency Operation

X Geng, C Kuring, O Hilt, M Wolf… - CIPS 2022; 12th …, 2022 - ieeexplore.ieee.org
This work clarifies the special characteristics of GaN transistors with non-insulating gate and
challenges to drive them. Different existing driver circuits are compared, and the issues …

[引用][C] GaN 高频开关电力电子学的新进展(续)

赵正平 - 半导体技术, 2016