Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the
infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband …

The integration of Ge on Si for photonics applications has reached a high level of maturity:
Ge photodetectors are available on the Si platform in foundry processes, and Si/Ge …

n-type Ge/SiGe terahertz quantum cascade lasers are investigated using non-equilibrium
Green's functions calculations. We compare the temperature dependence of the terahertz …

Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over
existing III-V devices. Although coherent electron transport effects are known to be important …

Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent
terahertz (THz) radiation sources with silicon microelectronics. Theoretical studies have …

In this paper, we have experimentally and numerically studied the nonradiative
intersubband (ISB) relaxation in n-type Ge/SiGe quantum well (QW) systems. Relaxation …

The waveguide losses from a range of surface plasmon and double metal waveguides for
Ge/Si_1− xGe_x THz quantum cascade laser gain media are investigated at 4.79 THz (62.6 …

In this work, we have developed a reduced pressure chemical vapor deposition (RP-CVD)
epitaxial process to grow strain-balanced Ge/Si0. 4Ge0. 6 multilayers on 200mm diameter Si …

n-type doped Ge quantum wells with SiGe barriers represent a promising heterostructure
system for the development of radiation emitters in the terahertz range such as electrically …

We present simulation results for two resonant phonon terahertz quantum cascade lasers
using a self-consistent energy balance model, which determines the electron temperature …