Aluminum nitride (AlN) is a technologically relevant material that can be deposited at low
temperatures in the form of thin-films while preserving most of its physical properties …

Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …

Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4
eV of GaN, have attracted great attention recently. As a typical representative, wurtzite …

A controllable and smooth potassium hydroxide-based wet etching technique was
developed for the AlGaN system. High selectivity between AlN and AlxGa1ÀxN (up to 12Â) …

Surface states and their influence on the Fermi level at the surface of GaN and AlN are
studied using x-ray photoelectron spectroscopy (XPS). The effect of polarity on surface …

Aluminum‐gallium‐nitride alloys (Al x Ga1–x N, 0≤ x≤ 1) can emit light covering the
ultraviolet spectrum from 210 to 360 nm. However, these emitters have not fulfilled their full …

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based
electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors …

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power
radio frequency electronics. We report successful homoepitaxial growth of N-polar AlN by …

In the past few decades, silicon photonics with complementary metal-oxide-semiconductor
(CMOS) process compatibility has been well developed and successfully applied to …

We report a GaN-based self-powered metal–semiconductor–metal (MSM)-type ultraviolet
(UV) photodetector (PD) by employing a “lateral polarity structure (LPS)” grown on the …