Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

The world needs economical and sustainable alternate energy sources to combat the
irreversible phenomenon like global warming. Solar photovoltaic technology, which converts …

Uniform GaN nanorod arrays are grown vertically by selective area growth on⟨ 0001⟩
substrates. The GaN nanorods present six nonpolar {11̅00} facets, which serve as growth …

We report the selective-area growth (SAG) of Ga-polar thin GaN nanowires on patterned
GaN/sapphire (0001) substrates using metalorganic chemical vapor deposition (MOCVD) …

We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase
epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches …

Dislocation filtering in GaN by selective area growth through a nanoporous template is
examined both by transmission electron microscopy and numerical modeling. These …

In the past few years, tremendous progress has been demonstrated on epitaxial growth and
processing of group III nitride nano‐and microrods (NAMs). This has also enabled the …

Multi-color emission from coaxial GaInN/GaN multiple-quantum-shell (MQS) nanowire-
based light-emitting diodes (LEDs) was identified. In this study, MQS nanowire samples for …

Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays
grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented …

The early growth stages of GaN nanowires on GaN-on-sapphire templates with a patterned
dielectric mask have been characterized by using transmission electron microscopy. The …