During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

An effective way to reduce supply voltage and resulting power consumption without losing
the circuit performance of CMOS is to use CMOS structures using high carrier …

Tunnel field-effect transistors (TFETs) have extremely low leakage current, exhibit excellent
subthreshold swing, and are less susceptible to short-channel effects. However, TFETs do …

A combination of the materials science, manufacturing processes, and pioneering research
and developments of SiGe and strained-Si have offered an unprecedented high level of …

The present disclosure relates to a Gallium-Nitride (GaN) based module, which includes a
module substrate, a thinned switch die residing over the module substrate, a first mold …

For the first time, a simple and accurate analytical model for the threshold voltage of
nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs is developed …

The present disclosure relates to a wafer-level package that includes a first thinned die
having a first device layer, a multilayer redistribution structure, a first mold compound, and a …

The present disclosure relates to a wafer-level fan-out package that includes a first thinned
die, a second die, a multilayer redistribution structure underneath the first thinned die and …

The present disclosure relates to a radio frequency device that includes a transfer device die
and a multilayer redistribution structure underneath the transfer device die. The transfer …

Ultrathin, strained-silicon-on-insulator (s-SOI) structures without a residual silicon-
germanium (SiGe) underlayer have been fabricated using stress balance of bi-layer …