Dilute ferromagnetic semiconductors: Physics and spintronic structures

T Dietl, H Ohno - Reviews of Modern Physics, 2014 - APS
This review compiles results of experimental and theoretical studies on thin films and
quantum structures of semiconductors with randomly distributed Mn ions, which exhibit …

Theory of ferromagnetic (III, Mn) V semiconductors

T Jungwirth, J Sinova, J Mašek, J Kučera… - Reviews of Modern …, 2006 - APS
The body of research on (III, Mn) V diluted magnetic semiconductors (DMSs) initiated during
the 1990s has concentrated on three major fronts:(i) the microscopic origins and …

Site-specific atomic order and band structure tailoring in the diluted magnetic semiconductor (In, Ga, Mn) As

K Medjanik, O Fedchenko, O Yastrubchak, J Sadowski… - Physical Review B, 2021 - APS
Diluted ferromagnetic semiconductors combining ferromagnetic and semiconducting
properties in one material provide numerous new functionalities, attractive for basic studies …

chapter 1 III-V ferromagnetic semiconductors

F Matsukura, H Ohno, T Dietl - Handbook of magnetic materials, 2002 - Elsevier
Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …

Band structure evolution and the origin of magnetism in (Ga, Mn) As: From paramagnetic through superparamagnetic to ferromagnetic phase

L Gluba, O Yastrubchak, JZ Domagala, R Jakiela… - Physical Review B, 2018 - APS
The high-spectral-resolution optical studies of the energy gap evolution, supplemented with
electronic, magnetic, and structural characterization, show that the modification of the GaAs …

Properties of Ga1− xMnxAs with high Mn composition (x> 0.1)

D Chiba, Y Nishitani, F Matsukura, H Ohno - Applied physics letters, 2007 - pubs.aip.org
A series of Ga 1− x Mn x As layers with high Mn compositions x (= 0.075–0.200) has been
grown and investigated. Magnetization, magnetotransport, and magneto-optical properties …

Antisite effect on hole-mediated ferromagnetism in (Ga, Mn) As

RC Myers, BL Sheu, AW Jackson, AC Gossard… - Physical Review B …, 2006 - APS
We study the Curie temperature and hole density of (Ga, Mn) As while systematically varying
the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and …

[HTML][HTML] Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs

S Mack, RC Myers, JT Heron, AC Gossard… - Applied Physics …, 2008 - pubs.aip.org
Heavily alloyed, 100 nm Ga 1− x Mn x As (x> 0.1) films are obtained via low-temperature
molecular beam epitaxy by utilizing a combinatorial technique which allows systematic …

Cr-Doped III–V nitrides: potential candidates for spintronics

B Amin, S Arif, I Ahmad, M Maqbool, R Ahmad… - Journal of electronic …, 2011 - Springer
Studies of Cr-doped III–V nitrides, dilute magnetic alloys in the zincblende crystal structure,
are presented. The objective of the work is to investigate half-metallicity in Al 0.75 Cr 0.25 N …

Influence of Bi doping on the electronic structure of (Ga, Mn) As epitaxial layers

O Yastrubchak, N Tataryn, L Gluba, S Mamykin… - Scientific Reports, 2023 - nature.com
The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga, Mn) As on
its electronic structure as well as on its magnetic and structural properties has been studied …