A progressive journey into 2D-chalcogenide/carbide/nitride-based broadband photodetectors: recent developments and future perspectives

S Maity, K Sarkar, P Kumar - Journal of Materials Chemistry C, 2021 - pubs.rsc.org
Photodetection is one of the important technologies discussed in current scientific and
technological circles because of its undeniable and widespread applications in industry and …

Manipulating the Light‐Matter Interaction of PtS/MoS2 p–n Junctions for High Performance Broadband Photodetection

F Li, R Tao, B Cao, L Yang… - Advanced Functional …, 2021 - Wiley Online Library
Due to the limited carrier concentration, 2D transition metal dichalcogenides have lower
intrinsic dark current, and thus, are widely studied for high performance room …

Heterogeneous integration of colloidal quantum dot inks on silicon enables highly efficient and stable infrared photodetectors

Q Xu, IT Cheong, H Song, V Van, JGC Veinot… - ACS …, 2022 - ACS Publications
Integrating lead sulfide (PbS) colloidal quantum dots (CQDs) with crystalline silicon (c-Si)
has been proven to be an effective strategy in extending the sensitivity of Si-based …

Electrodeposition of nanostructured FeS2 films: The effect of Sn concentrations on the optoelectronic performance

M Zebarjad, F Jamali-Sheini, R Yousefi - Solid State Sciences, 2021 - Elsevier
By electrodeposition method, the nanostructured iron pyrite (FeS 2) films were deposited on
the FTO substrate. X-ray diffraction (XRD) analysis showed the formation of cubic pyrite (FeS …

Nanostructured FeS2 films: Influence of effective parameters on electrochemical deposition and characterization of physical properties

M Zebarjad, F Jamali-Sheini, R Yousefi - Ceramics International, 2021 - Elsevier
In this study, films of iron disulfide (FeS 2) nanostructures are prepared by electrochemical
deposition on the Fluorine-doped tin oxide (FTO) glass substrate. The effect of deposition …

405 nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method

H Ahmad, H Rashid - Journal of Modern Optics, 2019 - Taylor & Francis
In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is
fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at …

WS2(RE)/Si2(X)H co-doped heterojunctions for wide-spectrum and high-performance photodetections

Y Zhao, X Liang, S Liu, X Deng, X Shi, H Zhao - Journal of Optics, 2024 - Springer
A layered heterostructure with type-II energy band arrangement is an effective way to
improve the photodetections. For this purpose, a novel type-II WS2/Si2H heterojunction is …

[HTML][HTML] 一維金/矽單晶異質奈米結構陣列之製備及其近紅外光感測特性之研究

WJ Pan - 2020 - ir.lib.ncu.edu.tw
摘要(中) 本研究以奈米球微影術及金屬輔助催化蝕刻法, 成功地在(001) 矽單晶基材上製備大
面積準直排列之矽單晶奈米柱以及矽單晶奈米錐陣列, 且在近紅外光波段有大幅提升光吸收之 …

Fabrication of a carbon nanotube/tungsten disulfide visible spectrum photodetector

H Rashid, NM Sapiee, N Arsad, H Ahmad… - Applied Optics, 2021 - opg.optica.org
Two-dimensional-material-based photodetectors are gaining prominence in optoelectronic
applications, but there are certain factors to consider with bulk material usage. The demand …

Optoelectronic characteristics of tungsten disulphide based visible range photodetector

H Rashid, R Ramli, H Ahmad - 2019 IEEE 9th International …, 2019 - ieeexplore.ieee.org
In this work, tungsten disulphide (WS2) based heterojunction photodetector device is
fabricated on top of silicon (Si) substrate by using simple drop casting method. The device is …