2D ultrawide bandgap semiconductors: odyssey and challenges

W Yang, K Xin, J Yang, Q Xu, C Shan, Z Wei - Small Methods, 2022 - Wiley Online Library
Abstract 2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in
the field of high‐power transparent electronic devices, deep‐ultraviolet photodetectors …

Evolution of low-dimensional material-based field-effect transistors

W Ahmad, Y Gong, G Abbas, K Khan, M Khan, G Ali… - Nanoscale, 2021 - pubs.rsc.org
Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …

MXene quantum dots/perovskite heterostructure enabling highly specific ultraviolet detection for skin prevention

Y Zheng, Y Wang, Z Li, Z Yuan, S Guo, Z Lou, W Han… - Matter, 2023 - cell.com
Summary Two-dimensional (2D) perovskite-based optoelectronic devices have broad
application prospects because of the ultrafast and ultrasensitive detection in particular …

Organic-inorganic face-to-face ZnO NRs-based self-powered UV photodetectors: Heterojunction with poly (3, 4-ethylenedioxyselenophene) and enhanced …

N Serkjan, X Liu, T Abdiryim, F Liu, H Zhang, A Kadir… - Carbon, 2023 - Elsevier
In this study, a novel organic-inorganic self-powered UV photodetector (UV PD) is realized
by the face-to-face assembling of poly (3, 4-ethylenedioxyselenophene)(PEDOS)/FTO and …

Reconfigurable band alignment of (, W) multilayer van der Waals heterostructures for photoelectric applications

X Li, T Liu, L Li, M He, C Shen, J Li, C Xia - Physical Review B, 2022 - APS
Integrating two-dimensional materials into van der Waals heterostructures (vdWHs) is
considered to be an efficient strategy for multifunctional devices. Here, the m-GaS/n-MoTe 2 …

Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

J Zhi, M Zhou, Z Zhang, O Reiser, F Huang - Nature communications, 2021 - nature.com
Realizing transparent and energy-dense supercapacitor is highly challenging, as there is a
trade-off between energy storing capability and transparency in the active material film. We …

Ultrafast response self-powered UV photodetectors based on GaS/GaN heterojunctions

Z Lin, T Lin, T Lin, X Tang, G Chen, J Xiao… - Applied Physics …, 2023 - pubs.aip.org
Self-powered ultraviolet (UV) photodetectors (PDs) based on GaN have been of great
importance in the application of UV communication, thanks to its wide direct bandgap and …

Synthesis and applications of wide bandgap 2D layered semiconductors reaching the green and blue wavelengths

Y Lu, JH Warner - ACS Applied Electronic Materials, 2020 - ACS Publications
Two-dimensional semiconductors with a layered structure are now among the most
extensively studied materials. The unique structural form of 2D layered semiconductors …

All-2D architectures toward advanced electronic and optoelectronic devices

JD Yao, GW Yang - Nano Today, 2021 - Elsevier
Conventional Si-based complementary metal–oxide–semiconductor (CMOS) techniques are
suffering intrinsic limitations induced by the continuous downscaling of physical dimensions …

Self-powered organic phototransistors with asymmetrical van der Waals stacking for flexible image sensors

J Zhao, Q Du, X Zheng, Y Liu, S Li, W Wang… - ACS …, 2023 - ACS Publications
Organic materials have drawn significant interest for next-generation advanced
optoelectronic devices or systems owing to their extraordinary light absorption, intrinsic …