Exploring new materials with complex structures and excellent transport properties has
always been a fascinating topic in thermoelectrics. Recently,(GeTe) n (Sb 2 Te 3) m-based …

Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …

Abstract Layered IV-V-VI semiconductors have immense potential for thermoelectric (TE)
applications due to their intrinsically ultralow lattice thermal conductivity. However, it is …

Materials with low lattice thermal conductivity (κlat) are crucial for the applications of thermal
insulation and thermoelectric (TE) energy conversion. Stacking fault (SF)-induced phonon …

In this article, we revisit bonding in crystalline GeTe, a simple binary alloy that is also a
popular phase change material, and use an ab initio approach that goes beyond the usual …

Lone pairs explain the structure of many molecular solids, as well as the chain‐like or
layered structures encountered in many chalcogenide crystals. Such chalcogenides have …

Abstract GeTe-Sb2Te3 pseudobinary system, especially Ge2Sb2Te5 alloy, is the most
desirable material to be commercialized in phase change random access memory. Directly …

Pseudo-binary GeSbTe alloys, best known as phase-change materials, are quasi-two-
dimensional semiconductors in their stable trigonal phases with high electrical conductivity …

First-principles calculations and Boltzmann transport theory are used to evaluate the
electronic structure and thermoelectric properties of the high-temperature rhombohedral Ge …

Atomically thin semiconductors with superior electronic and optical properties play a critical
role in the continuous advances of electronic and optoelectronic devices. Here, using first …