We report Monte Carlo simulations of the current response and noise spectrum in heavily
doped nanometric GaAs Schottky-barrier diodes (SBDs) operating under periodic large …

Monte Carlo simulations of high-field transport are used to calculate the spectral density of
velocity fluctuations and the diffusion coefficients of hot electrons in GaN and InN. The …

Gallium nitride can offer a high-power alternative for millimeter-wave Gunn oscillators.
Hence, an ensemble Monte Carlo-based comprehensive theoretical assessment of …

We report Monte Carlo particle (MCP) simulations of the current response and noise
spectrum in heavily doped nanometric GaAs Schottky-barrier diodes (SBDs) operating …

Abstract We report Monte Carlo simulations of electronic noise in heavily doped nanometric
GaAs Schottky-barrier diodes (SBDs) recently proposed as promising devices for THz …

Graphene on different substrates, such as SiO 2, h-BN and Al 2 O 3, has been subjected to
oscillatory electric fields to analyse the response of the carriers in order to explore the …

In this paper, we explore the capabilities of MoS 2 and WS 2 2D monolayers to produce
radiation in the terahertz range by the generation of high-order harmonics. This …

We investigate by means of Monte Carlo simulations the physical processes associated with
the emission of TeraHertz radiation in different electronic devices. We analyze four …

The development of THz electron devices by coupling time-dependent electron quantum
transport and electromagnetism is studied. A novel proposal for a frequency multiplier that …

A Monte Carlo study of hot-electron intrinsic noise in a n-type GaAs bulk driven by one or
two mixed cyclostationary electric fields is presented. The noise properties are investigated …