The time kinetics of interface trap generation and passivation (ΔN IT) and its contribution (ΔV
IT) during and after negative bias temperature instability (NBTI) stress is calculated by using …

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

Abstract Circuit Aging Reliability Analysis Tool (CARAT), a framework that calculates
random activity (frequency and duty) aware degradation of FETs to simulate circuit aging …

A deterministic reaction-diffusion–drift model is used for the time kinetics of bulk gate
insulator trap generation in p-channel Field Effect Transistors (FETs) under inversion stress …

The TCAD framework developed in part-I of this paper is used to study the impact of fin
length (FL) and fin width (FW) scaling on interface trap generation (ΔV IT) during negative …

The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …

An ultrafast (10ps delay) characterization method is used to measure threshold voltage shift
(ΔV T) owing to Bias Temperature Instability (BTI) and Hot Carrier Degradation (HCD) stress …

In this article, NSFET performances including DC electrical characteristics, analog/RF
metrics and NBTI degradation are studied using 3D fully-calibrated TCAD simulation …

In this paper, we report the bias temperature instability (BTI) reliability in stacked gate-all-
around (GAA) nanosheet (NS) devices. We show that, in addition to its superior intrinsic …

An Activated Barrier Double Well Thermionic (ABDWT) model is used to calculat e hole
trapping-detrapping (ΔV HT) kinetics, which, together with generation of interface (ΔV IT) …