Review of commercial GaN power devices and GaN-based converter design challenges
Gallium nitride (GaN) power devices are an emerging technology that have only recently
become available commercially. This new technology enables the design of converters at …
become available commercially. This new technology enables the design of converters at …
A review of gallium nitride power device and its applications in motor drive
X Ding, Y Zhou, J Cheng - CES Transactions on Electrical …, 2019 - ieeexplore.ieee.org
Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high
electron mobility and low dielectric constant. Compared with traditional Si devices, these …
electron mobility and low dielectric constant. Compared with traditional Si devices, these …
Parasitic capacitance Eqoss loss mechanism, calculation, and measurement in hard-switching for GaN HEMTs
R Hou, J Lu, D Chen - 2018 IEEE Applied Power Electronics …, 2018 - ieeexplore.ieee.org
Gallium Nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can
achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular …
achieve relatively high-efficiency and high-frequency in hard-switching mode. One particular …
Review of loss distribution, analysis, and measurement techniques for GaN HEMTs
J Gareau, R Hou, A Emadi - IEEE Transactions on Power …, 2019 - ieeexplore.ieee.org
In recent years, there has been a trend for improved performance in semiconductor
switches, allowing power electronic systems to achieve higher efficiency and higher power …
switches, allowing power electronic systems to achieve higher efficiency and higher power …
Performance of GaN power devices for cryogenic applications down to 4.2 K
Gallium nitride (GaN) power devices are employed in an increasing number of applications
thanks to their excellent performance. Nevertheless, their potential for cryogenic …
thanks to their excellent performance. Nevertheless, their potential for cryogenic …
Power loss characterization and modeling for GaN-based hard-switching half-bridges considering dynamic on-state resistance
Gallium nitride enhancement-mode high electron mobility transistors (GaN E-HEMTs) can
achieve high frequency and high efficiency due to its excellent switching performance …
achieve high frequency and high efficiency due to its excellent switching performance …
Review of pulse test setup for the switching characterization of GaN power devices
Pulse test techniques are widely adopted in characterizing both the static and dynamic
performances of semiconductor devices considering various device structures and operating …
performances of semiconductor devices considering various device structures and operating …
A multivariable turn-on/turn-off switching loss scaling approach for high-voltage GaN HEMTs in a hard-switching half-bridge configuration
R Hou, J Xu, D Chen - 2017 IEEE 5th Workshop on Wide …, 2017 - ieeexplore.ieee.org
Efficiency evaluation is critical in modern power converter design. For hard-switching
converters, the E on/E off is the key to calculating switching losses. Although some …
converters, the E on/E off is the key to calculating switching losses. Although some …
Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
Commercially available normally-off GaN power high-electron-mobility transistor (HEMT)
devices have typically adopted a p-GaN gate structure. In the gate region, there exist a …
devices have typically adopted a p-GaN gate structure. In the gate region, there exist a …
Research on losses of PCB parasitic capacitance for GaN-based full bridge converters
W Meng, F Zhang, G Dong, J Wu… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
The utilization of wide band-gap semiconductor devices provides the possibility of higher
switching frequency and power density for power converters. However, the influence of …
switching frequency and power density for power converters. However, the influence of …