Silicon-Germanium (SiGe) technology effectively merges the desirable attributes of
conventional silicon-based CMOS manufacturing (high integration levels, at high yield and …

This paper presents an investigation of the impact of single-event transients (SETs) and total
ionization dose (TID) on precision voltage reference circuits designed in a fourth-generation …

The advantages and the tradeoffs associated with the use of inverse-mode (IM) silicon–
germanium (SiGe) heterojunction bipolar transistors (HBTs) biasing circuitry in radio …

The reliability of inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors
(HBTs) under dc stress and its potential impact on the performance of basic analog …

The single-event effect sensitivity of fourth-generation, 90 nm SiGe HBTs is investigated.
Inverse-mode,≥ 1.0 Gbps SiGe digital logic using standard, unoptimized, fourth-generation …

We investigate the impact of performance boosters using mechanical stress on the Single-
Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator …

Best practice in mitigation strategies for single-event transients (SETs) in radio-frequency
(RF) receiver modules is investigated using a variety of integrated receivers utilizing inverse …

The single-event effect sensitivity of three different commonly employed current mirror
circuits, as well as an unconventional inverse-mode current mirror, all implemented in C …

The doping profile of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) is
modified to enhance inverse-mode (IM) device operation. Device improvements are …

The propagation of single-event transient (SET) signals in a silicon-germanium direct-
conversion receiver carrying modulated data is explored. A theoretical analysis of transient …