Enhancement in analog/RF and power performance of underlapped dual-gate GaN-based MOSHEMTs with quaternary InAlGaN barrier of varying widths
H Mukherjee, M Kar, A Kundu - Journal of Electronic Materials, 2022 - Springer
An underlapped dual-gate (U-DG) quaternary In 0.05 Al 0.75 Ga 0.2 N/GaN metal–oxide–
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
semiconductor high-electron-mobility transistor (MOS-HEMT) and a conventional ternary Al …
Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT
C Chakraborty, A Kundu - IETE Journal of Research, 2024 - Taylor & Francis
Current transistor technology has issues with off-state current which reduces power
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
[HTML][HTML] Numerical Study of 2DEG Carrier Density of Quaternary AlInGaN-Based T-Gate MOSHEMT Grown on UWBG-β-Ga2O3 Substrate
N Amina, T Zine-eddine, M Zitouni, S Okba… - Power Electronic Devices …, 2025 - Elsevier
This paper presents a numerical simulation study of an E-mode AlInGaN/AlN/GaN metal
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
oxide semiconductor high electron mobility transistor (MOSHEMT) grown on an ultra-wide …
Influence of Buffer Length and Mole Fraction on Analog Performances of a Symmetrical Underlapped DG Si/SiGe-based MOS-HEMT Device
The Authors through this paper have investigated and performed an in-depth study of the
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …
Analog performances of an Underlapped Dual Gate (U-DG) Si/SiGe Metal Oxide …
GaN HEMT 电力电子器件技术研究进展
鲍婕， 周德金， 陈珍海， 宁仁霞， 吴伟东， 黄伟 - 电子与封装, 2021 - ep.org.cn
GaN HEMT 器件由于其击穿场强高, 导通电阻低等优越的性能, 在高达650 V
额定电压等级的高效, 高频转换器中有着广泛的应用前景. GaN HEMT 器件的特性优势与其工艺 …
额定电压等级的高效, 高频转换器中有着广泛的应用前景. GaN HEMT 器件的特性优势与其工艺 …
Analytical Comparison of Analog/RF Performance of DG InAlGaN/GaN based MOS-HEMTsfor GaN width variation
K Sorkhel, A Ghosh, H Mukherjee… - 2023 IEEE 2nd …, 2023 - ieeexplore.ieee.org
This article investigates the effect of varying buffer layer width of underlapped double gate
InAlGaN/GaN MOS-HEMT's with Hafnium based high-k dielectric gate oxide material on its …
InAlGaN/GaN MOS-HEMT's with Hafnium based high-k dielectric gate oxide material on its …
Influence of Device Length on Analog Performances of a Normally-Off Underlapped AlGaN/GaN-based Double Gate MOS-HEMT Device
C Chakraborty, A Kundu - 2024 5th International Conference …, 2024 - ieeexplore.ieee.org
This paper undertakes a thorough exploration and analysis of the analog performance of a
novel Normally off AlGaN/GaN Underlapped Metal Oxide Semiconductor-High Electron …
novel Normally off AlGaN/GaN Underlapped Metal Oxide Semiconductor-High Electron …
A Comparative Study on the Effect of Dielectric Gate Materials on Analog and RF Performance of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT Device
This paper aims to elucidate a comparative and analytical study based on the analog
characteristics of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT with varying …
characteristics of a Symmetrical Underlap DG Si/SiGe-based MOS-HEMT with varying …
[PDF][PDF] GaN HEMT 栅驱动技术研究进展
周德金， 何宁业， 宁仁霞， 许媛， 徐宏， 陈珍海， 黄伟… - 电子与封装, 2021 - ep.org.cn
GaN HEMT 器件由于其击穿场强高, 导通电阻低等优越的性能, 在高效, 高频功率转换领域中
有着广泛的应用前景. 栅驱动芯片对于GaN HEMT 器件应用起着至关重要的作用. 介绍了GaN …
有着广泛的应用前景. 栅驱动芯片对于GaN HEMT 器件应用起着至关重要的作用. 介绍了GaN …
用于GaN HEMT 栅驱动芯片的高精度欠压保护电路
陈恒江， 潘福跃， 周德金， 何宁业， 陈珍海 - 电子与封装, 2021 - ep.org.cn
设计了一种用于GaN HEMT 器件栅驱动芯片的高精度欠压保护电路, 能提供快速响应的高精度
阈值电压. 该电路一方面采用宽电压摆幅和快速响应的两级比较器电路, 提高处理速度; …
阈值电压. 该电路一方面采用宽电压摆幅和快速响应的两级比较器电路, 提高处理速度; …