Traditional von Neumann architecture is facing severe challenges due to separated physical
structure of memory and processing units, which inspires the development of in‐memory …

The structural, thermal, and dielectric properties of the ferroelectric phase of HfO 2, ZrO 2,
and Hf 0.5 Zr 0.5 O 2 (HZO) are investigated with carefully validated density functional …

Here, we present a structural study on the origin of ferroelectricity in Gd doped HfO 2 thin
films. We apply aberration corrected high-angle annular dark-field scanning transmission …

The origin of the unexpected ferroelectricity in doped HfO2 thin films is now considered to be
the formation of a non-centrosymmetric Pca21 orthorhombic phase. Due to the …

The question of whether one can systematically identify (previously unknown) ferroelectric
phases of a given material is addressed, taking hafnia (HfO 2) as an example. Low free …

Hafnia thin films have been under intensive research during the past few years due to its
robust ferroelectricity under very thin limit and good compatibility with silicon. The polar …

To date, trial and error strategies guided by intuition have dominated the identification of
materials suitable for a specific application. We are entering a data-rich, modelling-driven …

The surprising ferroelectricity displayed by hafnia thin films has been attributed to a
metastable polar orthorhombic (Pca 21) phase. Nevertheless, the conditions under which …

The discovery of ferroelectricity in hafnium oxide has revived the interest in ferroelectric
memories as a viable option for low power non-volatile memories. However, due to the high …

Thin film metal–insulator–metal capacitors with undoped hafnium oxide and a mixture of
hafnium and zirconium oxides are prepared by sputtering from ceramic targets. The …