Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin
films in the temperature (T) range of 4≤ T≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) …

Defect engineering provides a tremendous opportunity to impart novel functionalities to
nanomaterials. This report is focused on TiN metallic system, where the unpaired spin …

A detailed investigation of the electronic-and magneto-transport properties of Nd 0.8 Sr 0.2
MnO 3 with the variation of grain size (down to 42 nm) is presented here. Interestingly, we …

Among the transition metal nitrides, TiN is one of the most attractive wide-band gap
materials due to its extensive range of applications in photoelectric devices. TiN has a …

Abstract Design and innovation of novel materials capable of supporting energy conversion
technologies is critical for the expansion of clean and renewable energy systems and lower …

The low-temperature electronic transport behavior of under doped polycrystalline Pr0. 8Sr0.
2MnO3 (PSMO) manganite nanoparticles (down to 40 nm), have been investigated in the …