SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …

The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …

This article focuses on the avalanche energy handing ability and theoretical demonstration
of the avalanche failure mechanism for the SiC MOSFET by the unclamped inductive …

Differences in the thermal and electrical switching time constants between parallel-
connected devices cause imbalances in the power and temperature distribution, thereby …

In this article, the repetitive avalanche ruggedness of silicon carbide metal–oxide–
semiconductor field-effect transistors (MOSFETs) with asymmetric trench (AT) and double …

In this paper, the long-term reliability of commercial 1.2-kV 4H-SiC MOFSETs under
repetitive unclamped inductive switching stresses is evaluated experimentally. The …

Nonuniformities in the electrothermal characteristics of parallel connected devices reduce
overall reliability since power is not equally dissipated between the devices. Furthermore, a …

In this paper, the electrical parameter degradations of high-voltage 4H-SiC MOSFETs under
repetitive unclamped-inductive-switching (UIS) stresses were investigated experimentally …

The degradations of electrical parameters for double-trench silicon carbide (SiC) power
metal-oxidesemiconductor field-effect transistors (MOSFETs) under repetitive avalanche …

The degradations of electrical parameters for silicon carbide power MOSFETs under
repetitive short-circuit (SC) stress are investigated in detail in this paper. It demonstrates that …