Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination
KM Chen, CJ Lin, CW Chuang, HC Pai, EY Chang… - Micromachines, 2023 - mdpi.com
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-
power microwave applications, owing to their superior properties. However, the charge …
power microwave applications, owing to their superior properties. However, the charge …
[PDF][PDF] Analytical Modeling of Gate-Voltage Dependence on Source/Drain Series Resistances and Effective Gate Length in GaN MESFETs
OA Flores - 2024 - scholarworks.calstate.edu
This graduate project aims to develop an analytical model that presents the gate-voltage
(VG) dependence on source and drain resistances (Rs and Rd, respectively) as well as the …
(VG) dependence on source and drain resistances (Rs and Rd, respectively) as well as the …