HfO2 based ferroelectric materials have great application potential in ferroelectric tunneling
junction. Here, the low temperature annealed Zr-Rich HfxZr films based ferroelectric tunnel …

Low‐power nonvolatile memories operating down to deep cryogenic temperatures are
important for a large spectrum of applications from high‐performance computing, electronics …

The future computing beyond von Neumann era relies heavily on emerging devices that can
extensively harness material and device physics to bring novel functionalities and can …

By design of the element concentration, regulating the ratio of the t phase and the energy
difference between t and o phases, the ZrHfOx (ZHO) film demonstrated the highest …

Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of
quantum dot arrays. In this study, we present experimental results and discuss the scaling …

Ferroelectric materials, characterized by their polarization switching capabilities, have
emerged as promising candidates for non-volatile memory applications due to their fast …

Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled
quantum computing systems. In this letter, we evaluate the cryogenic performance of an …

The advancement in high-performance computing technologies, including quantum and
aerospace systems, necessitates components that operate efficiently at cryogenic …

The semiconductor industry is actively looking for an all-encompassing memory solution that
incorporates the advantageous aspects of current technology. This features non-volatility …

An innovative resonant ferroelectric tunnel junction (FTJ) based on asymmetric barrier–well–
barrier structure is theoretically proposed. It is achieved by metal–ferroelectric–dielectric …