A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

Laser assisted atom probe tomography is used to characterize the alloy distribution in
BGaN. The effect of the evaporation conditions applied on the atom probe specimens on the …

It is shown that MOCVD growth allows to obtain BGaN epitaxial layers at growth temperature
(T gr) between 840 and 1090° C. It is found that morphology of the epitaxial layers and …

The electrical, optical, and high-resolution photoinduced transient spectroscopy (HRPITS)
measurements are used for the characterization of boron gallium nitride (BGaN) epitaxial …

This study involves the design and simulation of a BGaN/GaN/ZnO/Al2O3 photodetector for
UV/BLUE light with two different boron concentrations: 5% and 20%. The proposed …

BGaN epilayers with boron contents up to 5.6% were grown on SiC substrates by metal–
organic chemical vapor deposition. The effects of boron incorporation on the structural and …

Since the BGaN alloy is considered a promising material in the wide range of optoelectronic
applications, a detailed study of its band structure and optical properties is highly …

The band offset parameters of low-boron-content BGaN/GaN heterojunctions have been
studied using x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) in B x …

Since the small lattice constant a of wurtzite BGaN alloy and the good insulating property of
its epitaxial layer, the use of the BGaN with a small B-content (0.005–0.02) as a buffer has …

Using the semi-insulating property and small lattice constant a of wurtzite BGaN alloy, we
propose a BGaN buffer with a B-content of 1% to enhance two-dimensional electron gas …