Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC)
This article presents an analytical study and effect of temperature (T= 100, 200, 300, 400 K)
on various parameters of gate‐stack dual metal nanowire field‐effect transistor (gate‐stack …
on various parameters of gate‐stack dual metal nanowire field‐effect transistor (gate‐stack …
3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric
MI Idris, AB Horsfall - Materials Science in Semiconductor Processing, 2021 - Elsevier
This paper reports on the first investigation of the characteristics of 3D structures formed in
silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on …
silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on …