The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias
Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent …

Gate-all-around stacked nano-sheet (GAA-SNS) p-channel field effect transistors (FETs)
having varying sheet widths are utilized for ultrafast measurements (delay) of negative bias …

Ultrafast measurements (10-delay) are done to characterize the time evolution of threshold
voltage shift () due to the positive bias temperature instability (PBTI) and hot carrier …

Measured time kinetics of threshold voltage shift (ΔV T) in p-FETs during and after DC and
AC NBTI stress is modeled using the BTI Analysis Tool (BAT) framework. DC and low …

FinFET technology has become an attractive candidate for high-performance and power-
efficient applications. In the other hand, the behavior of FinFET devices is influenced by self …

In ever-shrinking technology nodes, where transistor 3D structures become increasingly
confined and their features verge on the atomic scale, the phenomena of aging and self …

Transistor and circuit reliability estimations face various challenges in both traditional and
machine learning (ML) based approaches. In this work, we provide an overview of the …

From Bardeen's explanation of semiconductor surface states to the reliability challenges of
ultrathin gate oxides of planar transistors to the Hot‐carrier degradation challenge in self …

An on-chip digital sensor has been demonstrated in 28nm High-k Metal Gate (HKMG) for
bias temperature instability (BTI) statistical characterization with the benefits: fast statistical …

Abstract The Compact-Physical (Comphy) framework is tested against the experimental
Negative Bias Temperature Instability (NBTI) data. A cost-function based optimizer is used …