As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …

For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …

Computer-aided design (CAD) tools traditionally optimize for power, performance, and area
(PPA). However, given a vast number of hardware security threats, we call for secure-by …

Trap density refers to the density of electronic trap states within dielectric materials that can
capture and release charge carriers (electrons or holes) in a semiconductor channel …

In this article, we propose a 2-D study for investigating the self-heating effect in new partially
insulated field-effect transistors (PiFETs) based on high-k gate dielectrics. The thermal …

The characterization of the self-heating effect (SHE) has been an important research topic in
advanced technology, but the existing characterizations are few and the characterization …

Self-Heating Effects (SHE) is known as one of the key reliability challenges in FinFET and
beyond. Large timing guard bands are necessary, which we try to reduce. In this work, we …

Thermal issue emerges as one of the critical reliability concerns in integrated circuit design,
especially for advanced technology. To improve the temperature immunity and reduce the …

Self-heating effect (SHE) is a major reliability concern in current and upcoming technology
nodes due to its ability to increase the channel's temperature of transistor and leading to …