The sixth generation of mobile communication (6G) systems is recently rising a lot of interest,
introducing new futuristic and challenging use cases that will demand much more than just …

This paper reports on two power amplifier (PA) monolithic microwave integrated circuits
(MMICs) operating at frequencies around 220 GHz. The PAs use 250-nm InP HBTs and thin …

Design and characterization of InP DHBT amplifiers in common-emitter and common-base
topologies are presented. Both one-stage and multistage circuits are demonstrated. For one …

We designed and fabricated a 300-GHz-band power amplifier (PA) with a wide bandwidth,
high output power, and high power-added efficiency (PAE) in in-house 250-nm indium …

We report the first demonstration of an InP double heterojunction bipolar transistor (HBT)
transferred to a higher thermal conductivity substrate. This process allows lithographic …

High gain amplifier MMICs (monolithic microwave integrated circuits) addressing broadband
radar and communication applications at the waveguide bands WR-6 (110-170 GHz) and …

This paper presents a broadband H-Band (220-325 GHz) power amplifier in a 35nm InGaAs-
based metamorphic high electron mobility transistor technology. The amplifier is realized as …

Abstract Design and characterization of a G-band (140–220 GHz) terahertz monolithic
integrated circuit (TMIC) amplifier in eight-stage common-emitter topology are performed …

This letter describes the use of a power‐optimized cascode configuration for obtaining
maximum output power at millimeter‐wave (mm‐wave) frequencies for a two‐way combined …

A strong market growth for wireless systems has taken place over the last two decades,
driven by persistent demands of ever smaller form-factor, increased power-efficiency and …