Dielectric ceramics capacitors (DCC) with excellent energy storage performance (ESP) and
charge-discharge performance (CDP) is very critical in the field of advanced electronics and …

High dielectric constant (k) materials have been investigated to improve the performance of
dynamic random access memory (DRAM) capacitors. However, the conventional binary …

A series of materials of the composition Ba0. 7Sr0. 3Zr x Ti (1− x) O3 (BSZT), where x= 0.00,
0.01, 0.02 and 0.03, were synthesised through the sol–gel method whereupon the …

Lead-free ferroelectric sol-gel thin films derived from barium strontium titanate (Ba 0.85 Sr
0.15 Zr 0.1 Ti 0.9 O 3, BSZT) were deposited onto two types of electrode:(i) noble metallic Pt …

Lead-free ferroelectric barium titanate-based (Ba 0.85 Sr 0.15 Zr 0.1 Ti 0.9 O 3, BSZT) thin
films have been successfully deposited on Pt-coated silicon substrates by a spin-coating …

BaTi 1− x Fe x O 3 (0.0≤ x≤ 0.02) thin films were prepared on Pt/Ti/SiO 2/(100) Si
substrates via the sol–gel process, and the effect of Fe substitution on the structure and …

Crystalline Ba0. 3Sr0. 7Zr0. 18Ti0. 82O3 (BSZT) thin film was grown on Pt (111)/Ti/SiO2/Si
substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge …

BaFe x Ti 2-x O 5 (x= 0, 0.004, 0.008, 0.012) thin films were prepared on Pt/Ti/SiO 2/(100) Si
substrates via sol-gel process. The phase transition behavior of the BaTi 2 O 5 thin film was …

BaNb x Ti 2–x O 5 (x= 0, 0.002, 0.004, 0.006, 0.008, 0.01) thin films were deposited on the Pt
(111)/Ti/SiO 2/Si substrates using the sol–gel method. The effect of Nb 5+ substitution on the …

ABSTRACT Ba0. 85Ca0. 15Zr0. 10Ti0. 90O3 (BCZT) lead-free ceramics were prepared by
sol–gel technique, and the influence of sintering temperature on phase evolution and …