Y Feng, P Huang, Z Zhou, X Ding, L Liu, X Liu… - Nanoscale Research …, 2019 - Springer
In this work, Ru-based RRAM devices with atomic layer deposited AlO y/HfO x functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was …
A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging …
D Zhu, Y Li, W Shen, Z Zhou, L Liu… - Journal of …, 2017 - iopscience.iop.org
The resistive random access memory (RRAM) device has been widely studied due to its excellent memory characteristics and great application potential in different fields. In this …
A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory …
L Chun-Yu - 臺灣師範大學光電工程研究所學位論文, 2022 - airitilibrary.com
In this thesis, the HfZrO2 (FE-HZO) based ferroelectric engineering will be investigated for emerging memory and logic applications. For the memory, the issues of ferroelectric field …
P Koohzadi, MT Ahmadi, J Karamdel… - International Journal of …, 2020 - World Scientific
Emerging memory technologies promise new memories to store more data at less cost. On the other hand, the scaling of silicon-based chips approached its physical limits. Nonvolatile …
M Soni, R Dahiya - Philosophical Transactions: Mathematical, Physical …, 2020 - JSTOR
Inspired by biology, significant advances have been made in the field of electronic skin (eSkin) or tactile skin. Many of these advances have come through mimicking the …