Ion bombardment often leads to compositional changes in the surface layers of
multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP …

The growth, structure, and annealing behavior of Al films, formed by in situ vapor deposition
on GaN0001–11 near 25 C, have been studied using Auger, electron energy loss, x ray and …

The growth and structure of Ni films, formed by in situ deposition on atomically clean GaN
(0001)-(1× 1) surfaces, have been studied using Auger, electron-energy-loss, and ultraviolet …

The chemistry and kinetics of the nitridation of GaAs (100) surfaces by N 2, N 2− H 2, and N
2− NH 3 radio-frequency plasmas, in a remote configuration, are investigated in situ and in …

The composition and structure of the n-type GaN {0001}-(1× 1) surface of samples grown on
sapphire by organometallic vapor-phase epitaxy (OMVPE) has been determined through the …

Attempts were made to passivate the GaAs (001) surface by a pseudomorphic ultra-thin
cubic GaN layer formed by a nitrogen radical (N-radical) or nitrogen plasma irradiation …

The benefits of using a low power glow discharge nitrogen plasma source to create high
quality GaN layers on GaAs (001) surface are first highlighted. This uncommon type of …

For the advance of GaN based optoelectronic devices, one of the major barriers has been
the high defect density in GaN thin films, due to lattice parameter and thermal expansion …

The kinetics of GaAs nitridation using N 2 plasmas, both radio frequency and electron
cyclotron resonance sources, is investigated using in situ and real time ellipsometry. A …

Interaction of low-energy nitrogen ions (0.3–2keV N2+) with GaAs (100) surfaces has been
studied by X-ray photoemission spectroscopy (XPS) around N 1s and Ga 3d core-levels and …