Dependence of electrical characteristics on epitaxial layer structure of AlGaN/GaN HEMTs fabricated on freestanding GaN substrates
Y Ando, R Makisako, H Takahashi… - … on Electron Devices, 2021 - ieeexplore.ieee.org
This article reports a systematic study on the effects of the epitaxial layer structure on the
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated …
Ultrafast broadband carrier and exciton dynamics of Fe-related centers in GaN
J Wang, F Shi, X Wu, J Yang, Y Chen, Q Wu… - Applied Physics …, 2023 - pubs.aip.org
The effect of Fe defects on carrier recombination and two-photon induced ultrafast exciton
dynamics in GaN crystals were investigated using femtosecond transient absorption …
dynamics in GaN crystals were investigated using femtosecond transient absorption …
A correlation between the defect states and yellow luminescence in AlGaN/GaN heterostructures
AlGaN/GaN heterostructures are investigated by performing complementary spectroscopic
measurements under novel experimental configurations. Distinct features related to the …
measurements under novel experimental configurations. Distinct features related to the …
[HTML][HTML] Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer
T Liu, H Watanabe, S Nitta, J Wang, G Yu… - Applied Physics …, 2021 - pubs.aip.org
The leakage current caused by the Si pileup at the regrowth interface of AlGaN/GaN high
electron mobility transistors (HEMTs) is significantly suppressed by the semi-insulating Mg …
electron mobility transistors (HEMTs) is significantly suppressed by the semi-insulating Mg …
Effects of vacancy defects on the electronic structure and optical properties of GaN: Fe
W Jia, Y Niu, M Zhou, R Liu, L Zhang, X Wang… - Superlattices and …, 2019 - Elsevier
Using first-principles calculations based on the density functional theory, we investigated the
photoelectric properties of GaN and 6.25% Fe doped GaN both containing nitrogen vacancy …
photoelectric properties of GaN and 6.25% Fe doped GaN both containing nitrogen vacancy …
[HTML][HTML] High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition
F Chen, S Sun, X Deng, K Fu, G Yu, L Song, R Hao… - AIP Advances, 2017 - pubs.aip.org
In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity
greater than 10 6 Ω/□ have been grown on c-plane sapphire substrates by metal-organic …
greater than 10 6 Ω/□ have been grown on c-plane sapphire substrates by metal-organic …
Confirmation of the compensation of unintentional donors in AlGaN/GaN HEMT structures by Mg-doping during initial growth of GaN buffer layer
Abstract Effect of partial Mg doping on the compensation of unintentional donors at
epilayer/template interface and in the GaN channel layer of AlGaN/GaN High Electron …
epilayer/template interface and in the GaN channel layer of AlGaN/GaN High Electron …
空位缺陷和原子掺杂对氮化镓热导率影响的分子动力学模拟.
高志乐， 王继芬 - Electronic Components & Materials, 2023 - search.ebscohost.com
针对氮化镓(GaN) 基电子器件散热的背景, 基于非平衡分子动力学(NEMD)
方法研究了空位缺陷和原子掺杂对GaN 晶格热导率的影响. 结果表明, 空位缺陷和原子掺杂会 …
方法研究了空位缺陷和原子掺杂对GaN 晶格热导率的影响. 结果表明, 空位缺陷和原子掺杂会 …
[PDF][PDF] Fe 掺杂GaN 光电特性的第一性原理研究
贾婉丽， 周淼， 王馨梅， 纪卫莉 - 物理学报, 2018 - wulixb.iphy.ac.cn
基于密度泛函理论体系, 计算了本征GaN 材料和12.5% 的Fe 掺杂GaN 体系的光电特性,
分析了晶体结构, 能带结构和电子态分布, 介电函数, 吸收系数, 折射率, 反射率 …
分析了晶体结构, 能带结构和电子态分布, 介电函数, 吸收系数, 折射率, 反射率 …
Effect of nitridation on the regrowth interface of AlGaN/GaN structures grown by molecular beam epitaxy on GaN templates
AlGaN/GaN structures were regrown on GaN templates using plasma-assisted molecular
beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen …
beam epitaxy (PA-MBE). Prior to the regrowth, nitridation was performed using nitrogen …