Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

In this paper, power electronic transformer (PET)-based railway traction systems are
comprehensively reviewed according to the unique application features and requirements …

In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power
switches at 600-V class is conducted in single-phase T-type inverter. Gate driver …

This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …

This paper reviews the modern electric propulsion architectures and configurations for
railway traction, which are currently in practice. The development and advancement of …

Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …

SiC devices are promising for outperforming Si counterparts in high-frequency applications
due to its superior material properties. Conventional wirebonded packaging scheme has …

Although SiC-mosfet has significant advantages on switching performance over traditional
Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the …

This paper proposes a multiport power electronic transformer (PET) topology with
multiwinding medium-frequency transformer (MW-MFT) isolation along with the associated …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …