How the Stacking Pattern Influences the Charge Transfer Dynamics of van der Waals Heterostructures: An Answer from a Time-Domain Ab Initio Study

A Ghosh, B Goswami, S Pal… - The Journal of Physical …, 2023 - ACS Publications
Here, we perform a time domain density functional study in conjunction with a non-adiabatic
molecular dynamics (NAMD) simulation to investigate the charge carrier dynamics in a …

Rational design of two-dimensional porous boron phosphide as efficient cathode material for Li and Na ion batteries: A first-principles study

A Ghosh, S Pal, P Sarkar - The Journal of Physical Chemistry C, 2022 - ACS Publications
The search for an efficient electrode material based on 2D materials for Li/Na-ion
rechargable batteries is an emerging field of research in the recent times. By employing …

Ultrafast Charge Transfer and Delayed Recombination in Graphitic-CN/WTe2 van der Waals Heterostructure: A Time Domain Ab Initio Study

A Ghosh, B Ball, S Pal, P Sarkar - The Journal of Physical …, 2022 - ACS Publications
In search of an efficient solar energy harvester, we herein performed a time domain density
functional study coupled with nonadiabatic molecular dynamics (NAMD) simulation to gain …

First-principles calculations to investigate electronic structure and transport properties of CrC monolayers: A new horizon for spintronic application

A Ghosh, M Kar, C Majumder, P Sarkar - Materials Science and …, 2021 - Elsevier
Using density functional theory we have predicted new chromium carbide (CrC) monolayers
with unique intrinsic ferromagnetism, high Curie temperature and high spin polarization. The …

New Cap-Holed AlP, GaP, and InP Nanotubes

R Mendoza-Báez, D García-Toral, JF Rivas-Silva… - ACS …, 2024 - ACS Publications
The structural, vibrational, and electronic properties of new inorganic X-phosphide
nanotubes (ch-XPNT), with X= Al, Ga, or In and chirality of (5, 5), are investigated. These …

Potential applications of C 2 N-h2D/BN nanoribbon adsorption of transition metals in spintronic devices and magnetic storage devices

Z Wang, D Fan, M Yin, H Li, H Hu, F Guo… - New Journal of …, 2024 - pubs.rsc.org
We first constructed a new type of two-dimensional nanoribbon material by splicing a C2N-
h2D nanoribbon with a BN nanoribbon, which is called the C2N-h2D/BN nanoribbon. The …

Point defect-mediated hot carrier relaxation dynamics of lead-free FASnI 3 perovskites

A Ghosh, S Kumar, P Sarkar - Nanoscale, 2024 - pubs.rsc.org
In search of a promising optoelectronic performance, we herein investigated the hot carrier
relaxation dynamics of a lead-free cubic phased bulk formamidinium tin triiodide (FASnI3) …

The absorption of transition metal atoms in g-C6N6 nanoribbon induces narrow band gap semiconductor with magnetism

M Yin, D Fan, Z Wang, H Li, H Hu, F Guo, Z Feng… - Physica B: Condensed …, 2023 - Elsevier
The gC 6 N 6 is a semiconductor material, the effect of this material used in electronic and
microelectronic devices is far from reaching the expected effect. To improve the overall …

Two-dimensional half-metals MSi 2 N 4 (M= Al, Ga, In, Tl) with intrinsic p-type ferromagnetism and ultrawide bandgaps

Y Ding, Y Huo, G Fang, L Yan, Y Wu… - Physical Chemistry …, 2024 - pubs.rsc.org
Intrinsic half-metallic nanomaterials with 100% spin polarization are highly demanded for
next-generation spintronic devices. Here, by using first-principles calculations, we have …

Hole doping at Sn sublattice of the buckled honeycomb SnX (X= S and Se) monolayer: an efficient functionalization approach

DM Hoat, J Guerrero-Sanchez - Materials Advances, 2024 - pubs.rsc.org
In this work, hole doping at the Sn sublattice is explored to induce feature-rich electronic and
magnetic properties in SnX (X= S and Se) monolayers. In the buckled honeycomb structure …