Face-centered-cubic crystallized super-fine (~ 2 nm in size) wet-ceria-abrasives are
synthesized using a novel wet precipitation process that comprises a Ce4+ precursor …

Herein, a method for predicting real-time removal rate and friction coefficient between the
pad and substrate during chemical mechanical polishing was investigated using only the …

Either new material or new integration usually requires a new CMP process. CMP is still
growing for CMOS applications. And many newer applications are now also being …

In the High-K Last process, MG CMP (Metal Gate Chemical Mechanical Planarization) is
required to precisely control the height of the gate and the surface flatness. Defects such as …

In the gate last process, also known as replacement metal gate (RMG), amorphous silicon in
the dummy gate should be removed first, then work function metal and metal gate should be …