Ultraviolet photodetectors (UV PDs) with “5S”(high sensitivity, high signal‐to‐noise ratio,
excellent spectrum selectivity, fast speed, and great stability) have been proposed as …

Ferroelectric materials have shown great value in the modern semiconductor industry and
are considered important function materials due to their high dielectric constant and tunable …

The flexible titanium dioxide (TiO2) nanofibers (NFs) film are promising candidates for high‐
performance wearable optoelectronic devices. However, the TiO2 ultraviolet photodetectors …

Wide band gap semiconductors such as ZnO are characterized by unique optoelectronic
properties, which have led to numerous applications in the field of sensors and …

A number of synapse devices have been intensively studied for the neuromorphic system
which is the next‐generation energy‐efficient computing method. Among these various …

Photodetectors are one of the most important components for a future “Internet-of-Things”
information society. Compared to the mainstream semiconductor-based photodetectors …

Lead halide perovskite single crystals have emerged as promising candidates for high-
performance optoelectronic devices because of their superior optoelectronic properties. To …

The tremendous impact of UV radiation on every individual has resulted in massive interest
in development of new sensor technologies to effectively monitor the solar exposure …

Over the past several years, a variety of hardware‐based artificial sensory systems,
including artificial skin, electronic noses, and artificial retinas, have attracted considerable …

Ultraviolet (UV) photodetectors are extensively adopted in the fields of the Internet of Things,
optical communications and imaging. Nowadays, with broadening the application scope of …