A unified quasi-ballistic transport model is developed for single-and double-gate graphene
field-effect transistors (GFETs) using the McKelvey flux theory approach. The proposed …

Brings the Band Structure of Carbon-Based Devices into the Limelight A shift to carbon is
positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly …

Silicene is an emerging two-dimensional (2D) semiconductor material which has been
envisaged to be compatible with conventional silicon technology. This paper presents a …

Light-emitting diodes (LEDs) have become one of the great hopes of the beginning 21st
century. With their longevity, superior energy efficiency and impeccable color characteristics …

We analyze a transition from single peaked to bimodal velocity distribution in a relativistic
fluid under increasing temperature, in contrast with a non-relativistic gas, where only a …

The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor
(MOSFET) is shown to be limited by the drain velocity that increases toward its saturation …

The ballistic mobility degradation is shown to originate from nonstationary (transient)
transport in response to the ohmic electric field. The source and drain reservoirs launch …

The equilibrium Fermi–Dirac distribution is revealed to transform to an asymmetric
distribution in a very high electric field where the energy gained (or lost) in a mean free path …

The carrier statistics in carbon nanotubes (CNTs) with nonparabolic energy spectrum is
studied in order to predict the ultimate (intrinsic) drift velocity as a function of temperature …

The nonlinearity in the I–V characteristics of a scaled-down micro/nano-scale resistive
channel is shown to elevate the DC and signal resistance as current approaches its …