The effect of slurry pH on the chemical mechanical planarization of a carbon-doped Ge 2 Sb 2 Te 5 phase change material
J Zheng, W Fang, C Li, W Liu, S Song… - Journal of Materials …, 2022 - pubs.rsc.org
Chemical mechanical planarization (CMP) is receiving a growing interest in the fabrication
of phase change memory in order to achieve a highly scaled confined cell structure and …
of phase change memory in order to achieve a highly scaled confined cell structure and …
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories
Germanium-rich alloys of Ge2Sb2Te5 have been developed to improve the reliability and
performance of embedded phase change memory (PCM). Fast program operation …
performance of embedded phase change memory (PCM). Fast program operation …
Multi-Physics Modeling Of Phase Change Memory Operations in Ge-rich GeSbTe Alloys
R Miquel, T Cabout, O Cueto, B Sklénard… - arXiv preprint arXiv …, 2024 - arxiv.org
One of the most widely used active materials for phase-change memories (PCM), the ternary
stoichiometric compound Ge $ _2 $ Sb $ _2 $ Te $ _5 $(GST), has a low crystallization …
stoichiometric compound Ge $ _2 $ Sb $ _2 $ Te $ _5 $(GST), has a low crystallization …