When the international technology roadmap of semiconductors (ITRS) started almost five
decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) …

The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …

Sputter deposition describes the process of depositing material from a target onto a sample
using ionized atoms in a vacuum environment. By accelerating ionized atoms through a …

Ruthenium has emerged as a promising candidate to substitute Cu as the interconnect
metallization in future technology nodes. Here, we demonstrate area scaling of Ru wires …

Understanding the growth mechanisms during the early stages of atomic layer deposition
(ALD) is of interest for several applications including thin film deposition, catalysis, and area …

Electromigration and resistivity of Cu, Co and Ru on-chip interconnections have been
investigated. Non-linered Co and Ru interconnects can have better interconnect resistance …

Stacking semiconductor chips allows for increased packing density within a given footprint
and efficient communication between different functional layers of the chip, leading to higher …

Ru has been considered a candidate to replace Cu-based interconnects in VLSI circuits.
Here, a methodology is proposed to predict the resistivity of (Ru) interconnects. First, the …

The semiconductor industry's transition to three-dimensional (3D) logic and memory devices
has revealed the limitations of plasma etching in reliable creation of vertical high aspect ratio …

Co has elicited a strong interest to replace Cu for future interconnect applications in
microelectronic circuits due to its potentially lower resistivity and better reliability at scaled …