Design of an original K-band active balun with improved broadband balanced behavior

C Viallon, D Venturin, J Graffeuil… - IEEE microwave and …, 2005 - ieeexplore.ieee.org
This letter deals with the design of an active balun exhibiting a single-ended input and
balanced outputs. We propose an original method, based on the determination of specific …

A 0.0058-mm2 Inductor-Less CMOS Active Balun With Gain and Phase Errors Within −0.1 ± 0.2 dB and −0.18 ± 1.17° From DC to 8 GHz

K Kawahara, Y Umeda, K Takano… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This paper presents a low-imbalance and inductor-less active balun. The large immittance of
the parasitics increases gain and phase errors in single-ended-to-differential conversion at …

Optimisation de structures différentielles en technologie SiGe pour applications en bande millimétrique. Application à la conception d'un mélangeur doublement …

C Viallon - 2003 - theses.hal.science
Cette thèse apporte une contribution à l'évaluation des potentialités de filières SiGe de type
BiCMOS pour les futures applications de télécommunications en bande millimétrique. Dans …

2.4 GHz Doherty power amplifier with on-chip active balun design

MG Li, QR Wu, RY Shi - 2009 IEEE 8th International …, 2009 - ieeexplore.ieee.org
In this work, a 2.4 GHz Doherty power amplifier with a on-chip active balun is presented by
using the SMIC CMOS 0.18 µm technology. With the employment of this balun, the bulky …

[PDF][PDF] Millimeter Wave Transceiver Frontend Circuits In Advanced Sige Technology With Considerations For On-Chip Passive Component Design And Simulatlion

Y Wang - 2006 - ecommons.cornell.edu
A novel design approach for implementing millimeter wave wireless transceiver front-end
circuits is proposed. The design methodology takes advantage in advances in Silicon …

Extraction of Electrical-and Noise-Parameters of Fully-Differential-Amplifier Subcircuits

Y Huang, L Belostotski - IEEE Access, 2019 - ieeexplore.ieee.org
This paper presents an approach for investigating the operation of fully differential circuits
that have internal nodes that are not available for direct measurement. This approach is …

Conception de circuits MMIC BiMOS SiGe appliqués à la synthèse de fréquence fractionnaire

W Wong - 2003 - theses.hal.science
L'intégration des circuits est au centre de l'enjeu lié à la réduction de l'encombrement et des
coûts de fabrication des systèmes de télécommunication. Dans les systèmes d'émission et …

A high CMRR BiCMOS active combiner balun

JL Gautier, F Temcamani, M Régis… - Microwave and Optical …, 2011 - Wiley Online Library
An integrated bipolar differential amplifier was optimized to have maximum common mode
rejection ratio (CMRR). This amplifier was then used as combiner and splitter baluns. A …

Utilisation de supports thermostables dans l'oxydation totale du méthane

JC Bertolini, C Methivier, FJCS Aires - GECAT 2001, 28/05/01-31/05/01, 2001 - hal.science
Cette thèse apporte une contribution à l'évaluation des potentialités de filières SiGe de type
BiCMOS pour les futures applications de télécommunications en bande millimétrique. Dans …

Investigation of lead frame package interconnection for mm-wave balanced circuit

R Ito - IEEE 14th Topical Meeting on Electrical Performance of …, 2005 - ieeexplore.ieee.org
Differential SiGe circuit has been gaining popularity for low-cost mm-wave circuit. Plastic
lead frame packages are believed to suit for device packaging for such low-cost system. In …