GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Advancements in energy efficient GaN power devices and power modules for electric vehicle applications: a review
RT Yadlapalli, A Kotapati, R Kandipati… - … Journal of Energy …, 2021 - Wiley Online Library
The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role
in various applications such as adapters, uninterrupted power supplies, smart grids, and …
in various applications such as adapters, uninterrupted power supplies, smart grids, and …
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Enhancement-mode β-Ga2O3 U-shaped gate trench vertical MOSFET realized by oxygen annealing
Vertical metal–oxide–semiconductor field effect transistor (MOSFET) is essential to the future
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
application of ultrawide bandgap β-Ga 2 O 3. In this work, we demonstrated an …
Prospects for wide bandgap and ultrawide bandgap CMOS devices
Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
wide and ultrawide bandgap semiconductor devices which can switch large currents and …
702.3 A·cm⁻²/10.4 mΩ·cm² β-Ga₂O₃ U-Shape Trench Gate MOSFET With N-Ion Implantation
High-performance-Ga2O3 U-shaped trench-gate metal-oxide-semiconductor field-effect
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
transistor (UMOSFET) has been demonstrated. Nitrogen ions implantation was employed to …
[HTML][HTML] 3D GaN nanoarchitecture for field-effect transistors
MF Fatahilah, K Strempel, F Yu, S Vodapally… - Micro and Nano …, 2019 - Elsevier
The three-dimensionality of 3D GaN field-effect transistors (FETs) provides them with unique
advantages compared to their planar counterparts, introducing a promising path towards …
advantages compared to their planar counterparts, introducing a promising path towards …
[HTML][HTML] Activation of buried p-GaN in MOCVD-regrown vertical structures
Thermal activation of buried p-type GaN is investigated in metal-organic chemical vapor
deposition-regrown vertical structures, where the buried p-GaN is re-passivated by …
deposition-regrown vertical structures, where the buried p-GaN is re-passivated by …
Challenges and perspectives for vertical GaN-on-Si trench MOS reliability: From leakage current analysis to gate stack optimization
K Mukherjee, C De Santi, M Borga, K Geens, S You… - Materials, 2021 - mdpi.com
The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
effect transistor (MOSFET) is a promising architecture for the development of efficient GaN …
Ohmic contact on low-doping-density p-type GaN with nitrogen-annealed Mg
S Lu, M Deki, J Wang, K Ohnishi, Y Ando… - Applied Physics …, 2021 - pubs.aip.org
We have demonstrated a fabrication process for the Ohmic contact on low-doping-density p-
type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω …
type GaN with nitrogen-annealed Mg. An Ohmic contact with a contact resistance of 0.158 Ω …