Millimeter-wave technology for automotive radar sensors in the 77 GHz frequency band
The market for driver assistance systems based on millimeter-wave radar sensor technology
is gaining momentum. In the near future, the full range of newly introduced car models will …
is gaining momentum. In the near future, the full range of newly introduced car models will …
A single-chip dual-band 22–29-GHz/77–81-GHz BiCMOS transceiver for automotive radars
Integration of multi-mode multi-band transceivers on a single chip will enable low-cost
millimeter-wave systems for next-generation automotive radar sensors. The first dual-band …
millimeter-wave systems for next-generation automotive radar sensors. The first dual-band …
[HTML][HTML] 硅基毫米波雷达芯片研究现状与发展
贾海昆， 池保勇 - 电子与信息学报, 2020 - jeit.ac.cn
毫米波雷达具备全天候复杂环境下的工作能力, 在汽车雷达, 智能机器人等方面有广泛的应用.
同时, 随着半导体技术的快速发展, 硅基工艺晶体管的截止频率提升, 硅基毫米波雷达成为研究 …
同时, 随着半导体技术的快速发展, 硅基工艺晶体管的截止频率提升, 硅基毫米波雷达成为研究 …
Low-sidelobe design of microstrip comb-line antennas using stub-integrated radiating elements in the millimeter-wave band
S Sugawa, K Sakakibara, N Kikuma… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
A novel radiating element with a matching circuit was developed for comb-line antennas of
traveling-wave operation. In the design of low-sidelobe traveling-wave array antennas, large …
traveling-wave operation. In the design of low-sidelobe traveling-wave array antennas, large …
A CMOS 77-GHz receiver front-end for automotive radar
This paper presents the design of a receiver (Rx) front-end for automotive radar application
operating at 76-77 GHz. The Rx employs a double conversion architecture, which consists of …
operating at 76-77 GHz. The Rx employs a double conversion architecture, which consists of …
A 24-GHz fully integrated CMOS transceiver for FMCW radar applications
YP Su, CY Huang, SJ Chen - IEEE Journal of Solid-State …, 2021 - ieeexplore.ieee.org
A 24-GHz fully integrated frequency-modulated continuous wave (FMCW) direct conversion
transceiver, implemented in a 55-nm low-power CMOS technology with a maximum of 190 …
transceiver, implemented in a 55-nm low-power CMOS technology with a maximum of 190 …
A 5.9 mW E-/W-band SiGe-HBT LNA with 48 GHz 3-dB bandwidth and 4.5-dB noise figure
E Vardarli, P Sakalas, M Schröter - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
The theory, design, and implementation of a millimeter-wave (mm-wave) two-stage common-
emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe): C Bipolar …
emitter (CE) low noise amplifier (LNA) using a 130-nm silicon-germanium (SiGe): C Bipolar …
A W-band single-antenna FMCW radar transceiver with adaptive leakage cancellation
M Kalantari, W Li, H Shirinabadi… - IEEE Journal of Solid …, 2020 - ieeexplore.ieee.org
This article presents a leakage cancellation architecture for single-antenna frequency-
modulated continuous-wave (FMCW) radars at W-band. A shared antenna for transmitter …
modulated continuous-wave (FMCW) radars at W-band. A shared antenna for transmitter …
A 9 dB noise figure fully integrated 79 GHz automotive radar receiver in 40 nm CMOS technology
T Murakami, N Hasegawa, Y Utagawa… - 2019 IEEE Radio …, 2019 - ieeexplore.ieee.org
This paper presents a low noise and fully integrated automotive radar receiver in 40 nm
CMOS technology. The receiver adopts the direct conversion architecture, and it consists of …
CMOS technology. The receiver adopts the direct conversion architecture, and it consists of …
A W-Band SiGe-HBT colpitts VCO for millimeter-wave applications with an analog tuning range of 12%
The theory, design and implementation of a millimeter-wave (mm-wave) common-collector
voltage-controlled differential Colpitts oscillator (VCO) using 130nmSiGe: C BiCMOS …
voltage-controlled differential Colpitts oscillator (VCO) using 130nmSiGe: C BiCMOS …