I Taibi, K Toumi - Thin Solid Films, 2022 - Elsevier
In this paper, studies of thestructural electronic and thermal properties of hydrogenated silicon carbide (6H-SiC) have been carried out applying first-principles calculations based …
The effects of temperature on the electrical properties of double gate DG-MOSFETs transistors in 4H-SiC and 6H-SiC technologies have been investigated and compared with …
GT Hasan, AH Mutlaq, KJ Ali, MA Saad - International Journal of …, 2023 - academia.edu
In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double …
CG Rodrigues, RT Ferracioli - Revista Tecnia, 2020 - periodicos.ifg.edu.br
Neste trabalho, foi deduzido teoricamente a velocidade de deriva, o deslocamento e a mobilidade dos portadores de carga em um semicondutor de grande interesse tecnológico …
Recently, it was stipulated in a publication that a missing elementary active-device termed" trancitor" by its designer could be made and could greatly simplify electronic circuits. This …