The implementation of high‐efficiency and high‐resolution displays has been the focus of
considerable research interest. Recently, micro light‐emitting diodes (micro‐LEDs), which …

III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

Epitaxy technology produces high-quality material building blocks that underpin various
fields of applications. However, fundamental limitations exist for conventional epitaxy, such …

The emergence of high‐performance materials for flexible inorganic light emitting diodes
(ILEDs) provides the foundations for a broad range of compelling, unconventional systems …

Remote epitaxy (RE), substrate polarity can “penetrate” two-dimensional materials (2DMs)
and act on the epi-layer, showing a prospective universal growth strategy. However …

In recent years, a novel epitaxial method based on Quasi-van der Waals (QvdW) force to
epitaxy three-dimensional (3D) nitride semiconductors on two-dimensional (2D) materials …

Beyond traditional heteroepitaxy, 2D‐materials‐assisted epitaxy opens opportunities to
revolutionize future material integration methods. However, basic principles in 2D‐material …

Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …

Lattice polarity is a key point for hexagonal semiconductors such as GaN. Unfortunately,
only Ga‐polarity GaN have been achieved on graphene till now. Here, the epitaxy of high …

This Perspective presents a review of current research activities on one-dimensional (1D)
semiconductor nanostructures grown on two-dimensional (2D) nanomaterials for flexible …