Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence
Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐
efficient computing analogous to the human brain and visual system. Inspired by the human …
efficient computing analogous to the human brain and visual system. Inspired by the human …
Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites
Resistive random-access memory (ReRAM) is expected to be the next-generation non-
volatile memory device because of its fast operation speed and low power consumption …
volatile memory device because of its fast operation speed and low power consumption …
Unravelling the nucleation mechanism of bimetallic nanoparticles with composition-tunable core–shell arrangement
The structure and atomic ordering of Au–Ag nanoparticles grown in the gas phase are
determined by a combination of HAADF-STEM, XPS and Refl-XAFS techniques as a …
determined by a combination of HAADF-STEM, XPS and Refl-XAFS techniques as a …
Flexible resistive switching bistable memory devices using ZnO nanoparticles embedded in polyvinyl alcohol (PVA) matrix and poly (3, 4-ethylenedioxythiophene) …
JJL Hmar - RSC advances, 2018 - pubs.rsc.org
The resistive switching memory effects in metal-insulator-metal devices with aluminium (Al)
as top electrode (TE) and bottom electrode (BE). A solution processed active layer …
as top electrode (TE) and bottom electrode (BE). A solution processed active layer …
Incorporation of SnO 2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device
We report the electrical bistable characteristics of a hybrid polymer/inorganic nanocomposite
device consisting of SnO2 nanoparticles (NPs) embedded in an insulating …
device consisting of SnO2 nanoparticles (NPs) embedded in an insulating …
Electrical switching and conduction mechanisms of nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in …
K Onlaor, T Thiwawong, B Tunhoo - Organic electronics, 2014 - Elsevier
We reported on the influence of zinc oxide nanoparticles (ZnO NPs) on the electrical bistable
behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an …
behavior of nonvolatile write-once-read-many-times (WORM) memory devices based on an …
Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices
This study investigated the nonvolatile memory characteristics of devices fabricated with
PMMA embedding composite of graphene and molybdenum disulphide, which were …
PMMA embedding composite of graphene and molybdenum disulphide, which were …
Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device
S Bhattacharjee, PK Sarkar, M Prajapat… - Journal of Physics D …, 2017 - iopscience.iop.org
Molybdenum disulfide (MoS 2) is of great interest for its applicability in various
optoelectronic devices. Here we report the resistive switching properties of …
optoelectronic devices. Here we report the resistive switching properties of …
[HTML][HTML] Surface functionalized carbon nanotube with polyvinylidene fluoride: Preparation, characterization, current-voltage and ferroelectric hysteresis behaviour of …
A comparative study of current-voltage characteristics and ferroelectric properties of
polyvinylidene fluoride (PVDF) based nanocomposite films with pure multiwall carbon …
polyvinylidene fluoride (PVDF) based nanocomposite films with pure multiwall carbon …
[HTML][HTML] Fabrication of bilayer ITO/YZO/PMMA/Al memory devices with insight ternary switching mechanism
Two terminal resistive switching memories are emerging candidates for the next generation
of non-volatile memory in the upcoming era of artificial intelligence and big data generated …
of non-volatile memory in the upcoming era of artificial intelligence and big data generated …