Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

We present a passivated 50 nm gate length metamorphic high electron mobility transistor
(mHEMT) technology optimized for the successful fabrication of submillimeter-wave MMICs …

Processes of diffusion of As and P atoms in InP and InAs, and atomic and energy structure of
group-V vacancies and interstitial P and As atoms in InP and InAs have been investigated …

Vacancies are generated in semiconductor devices while operating in the space radiation
environment, impacting semiconductor carrier concentrations and dynamics. Positron …

This work presents a comprehensive study of early aging behavior (< 500 hr) in∼ 800 nm,
phosphide-based laser diodes grown by solid-source MBE with different oxygen …

We investigate the materials properties and dark currents of planar InP/InGaAs avalanche
photodiodes (APDs) in which the p-dopant, Zn, is introduced by diffusion in an MOCVD …

We have used positron annihilation spectroscopy to study the introduction of point defects in
Zn-diffused semi-insulating GaAs. The diffusion was performed by annealing the samples for …

We have found evidence of a second acceptor state of the E center in Si 1− x Ge x by using
positron annihilation spectroscopy. To achieve this, we studied proton irradiated n-type Si 1 …

In both development and production of semiconductor lasers, failure analysis is crucial to
quickly identifying what is responsible for problems once they have been encountered. This …

We study the structure, formation energy, binding energy and transfer levels of the zinc-
phosphorus vacancy complex [Zn In− VP] in Zn-doped p-type InP, as a function of the …