Artificial intelligence (AI) advancements are driving the need for highly parallel and energy‐
efficient computing analogous to the human brain and visual system. Inspired by the human …

Resistive switching (RS) behavior of bilayer of poly (4-vinylphenol)(PVP): molybdenum
disulfide (MoS 2) nanocomposite (NC) and TiO 2 in resistive random-access memory …

High-performance flexible resistive random access memory (RRAM) devices were
demonstrated by engineering the switching layer with PVK: MoS2 composite and TiO2 …

Threshold switching (TS) memristor-based artificial neurons have been regarded as one of
the promising solutions for constructing circuits of spiking neural networks (SNNs) due to …

In this work, a unique composite of a polymer and two-dimensional material (PVP: MoSe2) is
demonstrated as a potential resistive switching layer for flexible resistive random-access …

Flexible resistive random access memory (RRAM) devices with biomaterial gelatin and
ultrathin HfOx hybrid bilayer dielectric exhibiting excellent resistive switching (RS) behavior …

Reliability of nonvolatile resistive switching devices is the key point for practical applications
of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic …

In this paper, firstly, some recently explored promising materials and processes for resistive
random access memory (ReRAM) devices with bipolar switching mechanism along with …

To search for ways to improve the performance of selectors, crossbar-structured Au/Ag/HfO x
(2 nm)/HfO2 (4 nm)/Ag-NIs/Au devices with embedded Ag nanoislands (Ag-NIs) and dual …

Wearable electronics and smart harvesting textile studies require a material system that
resists physical stimulation. Such applications require receptive piezo‐polymers, and their …