The superior performance of certain polycrystalline (PX) solar cells compared to that of
corresponding single‐crystal ones has been an enigma until recently. Conventional …

The scanning microwave microscope is used for calibrated capacitance spectroscopy and
spatially resolved dopant profiling measurements. It consists of an atomic force microscope …

We demonstrate that the contrast reversal effect in scanning capacitance microscopy (SCM)
is related to the Si/SiO 2 interface microroughness. The surface roughness has been …

Real-space mapping of doping concentration in semiconductor devices is of great
importance for the microelectronics industry. In this work, a scanning microwave impedance …

Connect basic theory with real-world applications with this practical, cross-disciplinary guide
to radio frequency measurement of nanoscale devices and materials.• Learn the techniques …

In this article we discuss the reliability of a quantification method for scanning capacitance
microscopy (SCM) measurements based on the calculation of a calibration curve. We …

A scanning capacitance microscope (SCM) combines an atomic force microscope (AFM)
with a 1-GHz tuned inductance-capacitance-resistance (LCR) circuit to measure the …

Using scanning capacitance microscopy (SCM), we have studied the photovoltaic effect on
differential capacitance (dC/dV) signals of low-energy-BF 2+-implanted silicon wafers. The …

Silicon nanowires (SiNWs) with axial doping junctions were synthesized via the Au‐
catalyzed vapor–liquid–solid growth method with the use of HCl. In this work, dopant …

ZnO/ZnO: Sb core-shell structured nanowires (NWs) were grown by the metal organic
chemical vapor deposition method where the shell was doped with antimony (Sb) in an …