Laser synthesis and microfabrication of micro/nanostructured materials toward energy conversion and storage

L Zhao, Z Liu, D Chen, F Liu, Z Yang, X Li, H Yu… - Nano-Micro Letters, 2021 - Springer
Nanomaterials are known to exhibit a number of interesting physical and chemical
properties for various applications, including energy conversion and storage, nanoscale …

Robust approach towards wearable power efficient transistors with low subthreshold swing

E Elahi, M Suleman, S Nisar, PR Sharma… - Materials Today …, 2023 - Elsevier
For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

Ru decorated TiOx nanoparticles via laser bombardment for photothermal co-catalytic CO2 hydrogenation to methane with high selectivity

T Dong, X Liu, Z Tang, H Yuan, D Jiang, Y Wang… - Applied Catalysis B …, 2023 - Elsevier
The global warming makes us focus on the resource utilization of CO 2. Herein, defective
TiO x nanoparticles with rich oxygen vacancies are synthesized through laser bombardment …

Industrial femtosecond laser induced construction of micro/nano wettability electrodes with outstanding hydrogen evolution performance

Z Wang, L Song, H Tao, Y He, Y Yang, T Wang… - Applied Surface …, 2023 - Elsevier
To realize an efficient hydrogen production in industrial water electrolysis, the development
of catalytic systems with excellent hydrogen evolution performance, cost-effectiveness, high …

Effect of oxygen stoichiometry on the threshold switching of RF-sputtered NbOx (x= 2.0–2.5) films

J Aziz, H Kim, S Rehman, JH Hur, YH Song… - Materials Research …, 2021 - Elsevier
In this study, we report the Poole-Frenkel induced threshold switching characteristics of
niobium dioxide (NbO 2) films by tuning oxygen stoichiometry. Similar to correlated oxides …

Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbOx

SK Nandi, SK Nath, AE El‐Helou, S Li… - Advanced Functional …, 2019 - Wiley Online Library
Devices exploiting negative differential resistance (NDR) are of particular interest for analog
computing applications, including oscillator‐based neural networks. These devices typically …

Dynamic resistive switching devices for neuromorphic computing

Y Wu, X Wang, WD Lu - Semiconductor Science and Technology, 2021 - iopscience.iop.org
Neuromorphic systems that can emulate the structure and the operations of biological neural
circuits have long been viewed as a promising hardware solution to meet the ever-growing …

Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films

D Chen, A Chen, Z Yu, Z Zhang, Q Tan, J Zeng, J Ji… - Ceramics …, 2021 - Elsevier
NbO 2-based selectors can effectively suppress cross-talk interference between memory
cells in the high-density cross-point nonvolatile memory arrays. By doping titanium into the …

Promotion of Probabilistic Bit Generation in Mott Devices by Embedded Metal Nanoparticles

Y Seo, Y Park, P Hur, M Jo, J Heo, BJ Choi… - Advanced …, 2024 - Wiley Online Library
Considerable attention has been drawn to the use of volatile two‐terminal devices relying on
the Mott transition for the stochastic generation of probabilistic bits (p‐bits) in emerging …

NbO2-based locally active memristors: from physical mechanisms to performance optimization

P Chen, X Zhang, Q Liu, M Liu - Applied Physics A, 2022 - Springer
Negative differential resistance (NDR) characteristic in NbO2-based memristors endows
them with the role of selectors, steep-slope transistors, or artificial neurons. However, the …