Spintronic devices for high-density memory and neuromorphic computing–A review

BJ Chen, M Zeng, KH Khoo, D Das, X Fong, S Fukami… - Materials Today, 2023 - Elsevier
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …

Multistate magnetic domain wall devices for neuromorphic computing

R Sbiaa - physica status solidi (RRL)–Rapid Research Letters, 2021 - Wiley Online Library
In recent years, neuromorphic computing has been intensively investigated, to take over the
conventional or von Neumann scheme. Herein, the advantages of memristors as neurons …

Advances in magnetic domain walls and their applications

S Dhull, A Nisar, N Bindal… - IEEE Nanotechnology …, 2022 - ieeexplore.ieee.org
This article explores the recent developments in spin-based domain wall (DW) memories.
The physics behind the DW motion, device materials, current challenges, and applications …

Development of Ultra-thin CoPt Films with Electrodeposition for Three-dimensional Domain Wall Motion Memory

T Huang, Y Takamura, M Saito… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
The authors developed the electrodeposition technique for CoPt thin films applicable to 3-D
domain wall motion memory (3D-DWMM). CoPt films with perpendicular magnetic …

Optimizing preparation conditions and characterizing for CoxPt1-x alloy cylindrical nanowires fabricated by electrodeposition on nanoporous polycarbonate …

N Oguchi, M Saito, T Homma, T Kato, T Ono… - Journal of Magnetism …, 2024 - Elsevier
This study investigated the influence of the preparation conditions on the Co composition,
crystal structure, and magnetic and electric conduction properties of cylindrical Co x Pt 1-x …

Manipulation of room-temperature magnetic skyrmions in a van der Waals ferromagnet Fe3GaTe2

Y Yin, M Liu, W Li, W Li, M Zou, S Wu… - New Journal of …, 2025 - iopscience.iop.org
The magnetic skyrmion in two-dimensional van der Waals (vdW) ferromagnetic materials
offer a feasible and robust platform for future spintronic applications, thanks to their atomic …

Exploring fast domain wall motion and DMI realization in compensated ferrimagnetic nanowires

M Mohammadi, S Ranjbar, P Van Thach… - Journal of Physics D …, 2024 - iopscience.iop.org
Recent advancements in spintronics have spurred interest in current-induced domain wall
motion as a promising avenue for next-generation memory technologies. While previous …

[HTML][HTML] Drastic enhancement of stable and fast domain wall motion in GdFe nanowires through laser-annealing treatment at wire edges

M Mohammadi, Y Miyose, S Sumi, K Tanabe… - AIP Advances, 2024 - pubs.aip.org
One of the key challenges in racetrack memory (RM) technology is achieving stable and
high velocities for domain walls (DWs) while maintaining low power consumption. In our …

Efficiency of Spin-Transfer Torque Assisted Spin-Orbit Torque Magnetization Switching under In-plane External Field Application

D Pan, D Oshima, T Kato - IEEE Transactions on Magnetics, 2024 - ieeexplore.ieee.org
We have simulated the magnetization dynamics under implementing spin-transfer torque
(STT) and spin-orbit torque (SOT) simultaneously, which is regarded as the writing process …

[HTML][HTML] Ultra-thin interfacial domain wall less than 1 nm based on TbxCo100− x/Cu/[Co/Pt] 2 heterostructures for multi-level magnetic pillar memory

S Ranjbar, S Sumi, K Tanabe, H Awano - AIP Advances, 2021 - pubs.aip.org
We propose a new pillar type of multi-level memory with Tb x Co 100− x/Cu/[Co/Pt] 2
heterostructures to achieve high storage density and controllable domain wall position in …