In this work we study theoretically and experimentally the multi-particle structure of the so-
called type-II quantum dots with spatially separated electrons and holes. Our calculations …

The structural and optical properties of InGaSb/GaP (001) type‐II quantum dots (QDs) grown
by metalorganic vapor phase epitaxy (MOVPE) are studied. Growth strategies as growth …

We investigate the effect of GaAs 1− x Sb x cladding layer composition on the growth and
properties of InAs self-assembled quantum dots surrounded by AlAs 0.56 Sb 0.44 barriers …

Stranski-Krastanov (SK) growth of In 0.5 Ga 0.5 Sb quantum dots (QDs) on GaP (001) by
metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD …

We have studied the ensemble photoluminescence (PL) of 11 GaSb/GaAs quantum dot/ring
(QD/QR) samples over≥ 5 orders of magnitude of laser power. All samples exhibit a …

We report an investigation on the morphological, structural, and optical properties of large
size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs (111) B and Si (111) …

Self-assembled Cd (Se, Te) quantum dots with various Se compositions embedded in the
ZnTe matrix are grown by molecular beam epitaxy. A huge redshift of the near band edge …

The nanowire platform offers great opportunities for improving the quality and range of
applications of semiconductor quantum wells and dots. Here, we present the self-catalyzed …

Crystal-phase control and crystalline quality improvement of GaAs nanowires (NWs) have
been realized by dopant (Be) incorporation in GaAs NWs. We demonstrate the improvement …

The nucleation features and measurements of holes energy levels of the InAsSbP type-II
quantum dots (QDs) with respect to the InAs valence band edge by employing …